HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet - Page 3

• Manufacturer Part Number: HGTG18N120BN
• Description: IGBT NPT N-CH 1200V 54A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG18N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 18A
• Current - Collector (ic) (max): 54A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Continuous Collector Current Ic: 54A
• Collector Emitter Saturation Voltage Vce(sat): 2.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
Electrical Specifications
NOTE:
Typical Performance Curves
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
3. Turn-Off Energy Loss (E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
60
50
40
30
20
10
0
25
PARAMETER
TEMPERATURE
50
T
C
, CASE TEMPERATURE (
OFF
75
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
T
C
= 25
100
o
C, Unless Otherwise Specified (Continued)
Unless Otherwise Specified
o
SYMBOL
C)
t
t
d(OFF)I
E
d(ON)I
R
E
V
OFF
t
t
θJC
125
t
ON
EC
rI
rr
fI
V
CE
GE
HGTG18N120BND
= 15V
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
IGBT and Diode at T
I
V
V
R
L = 1mH
Test Circuit (Figure 20)
I
I
I
IGBT
Diode
CE
EC
EC
EC
150
CE
GE
G
= 3Ω
= 18A
= 18A
= 18A, dI
= 2A, dI
= 960V
= 15V
TEST CONDITIONS
EC
EC
/dt = 200A/µs
/dt = 200A/µs
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
120
100
80
60
40
20
J
0
= 150
0
T
J
= 150
o
C
200
V
o
CE
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
G
400
= 3Ω, V
MIN
GE
-
-
-
-
-
-
-
-
-
-
-
600
= 15V, L = 200µH
TYP
205
140
800
3.7
2.6
2.6
21
17
60
44
-
-
1000
MAX
HGTG18N120BND Rev.C
0.32
0.75
240
200
4.9
3.1
3.2
26
22
75
55
1200
UNITS
o
o
C/W
C/W
mJ
mJ
ns
ns
ns
ns
ns
ns
V
1400