FDS8962C Fairchild Semiconductor, FDS8962C Datasheet
FDS8962C
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FDS8962C Summary of contents
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... R Thermal Resistance, Junction-to-Case θ JC Package Marking and Ordering Information Device Marking FDS8962C FDS8962C ©2005 Fairchild Semiconductor Corporation FDS8962C Rev. A1 ® General Description These dual N- and P-Channel enhancement mode power field = 10V effect transistors are produced using Fairchild Semiconductor’ 4.5V advanced PowerTrench process that has been especially ...
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... Turn-On Rise Time r t Turn-Off Delay Time d(off) t Turn-Off Fall Time f Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd FDS8962C Rev 25°C unless otherwise noted A Test Conditions = 250 µ -250 µ 250 µ A, Referenced to 25 ° -250 µA, Referenced to 25 ° C ...
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... R is determined by the user's board design. θJC θCA a) 78°/W when mounted 0.5 in pad copper Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS8962C Rev 25°C unless otherwise noted A Test Conditions 1.3 A (Note ...
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... JUNCTION TEMPERATURE (°C) J Figure 3. On-Resistance Variation with Temperature 125° 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDS8962C Rev. A1 2.2 3.5V 1 3.5V GS 1.4 3.0V 1 0.6 0 1.5 2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 0.07 0.06 0.05 0.04 0. 25° ...
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... Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON 10s 10V GS SINGLE PULSE 0.1 R θ 135°C 25°C A 0.01 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area. FDS8962C Rev. A1 800 V = 10V 20V DS 600 15V 400 200 C rss Figure 8. Capacitance Characteristics. 50 100µs 40 1ms 10ms 100ms ...
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... T , JUNCTION TEMPERATURE (°C) J Figure 13. On-Resistance Variation with Temperature - 1 GATE TO SOURCE VOLTAGE (V) GS Figure 15. Transfer Characteristics. FDS8962C Rev 1 -4.5V 1.6 -4.0V 1.4 1.2 -3.5V 1 -3.0V 0 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 0.2 0.15 0 25°C A ...
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... A 0.01 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 19. Maximum Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 FDS8962C Rev. A1 800 V = -5V 700 DS -10V 600 -15V 500 400 300 200 100 C rss Figure 18. Capacitance Characteristics. ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...