FDS8962C Fairchild Semiconductor, FDS8962C Datasheet - Page 4

• Manufacturer Part Number: FDS8962C
• Description: MOSFET N/P-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8962C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms / 0.052 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A, - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8962C

FDS8962C Rev. A1
Typical Characteristics: Q1 (N-Channel)
1.6
1.4
1.2
0.8
0.6
20
16
12
20
16
12
8
4
0
1
8
4
0
-50
1.5
0
Figure 3. On-Resistance Variation with
V
V
DS
Figure 1. On-Region Characteristics.
GS
Figure 5. Transfer Characteristics.
I
V
D
-25
= 5V
GS
= 10.0V
= 7A
6.0V
= 10.0V
2
V
GS
T
0.5
0
J
V
, JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
DS
, DRAIN-SOURCE VOLTAGE (V)
Temperature.
25
4.5V
2.5
4.0V
T
A
= 125°C
50
1
3
75
25°C
-55°C
3.5V
100
3.0V
1.5
3.5
125
150
4
2
4
0.0001
0.001
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.01
100
0.1
2.2
1.8
1.4
0.6
10
Figure 6. Body Diode Forward Voltage Variation
1
1
0
2
0
V
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
V
T
GS
with Source Current and Temperature.
GS
A
= 0V
= 25°C
= 3.5V
Drain Current and Gate Voltage.
0.2
V
SD
4.0
4
V
Gate-to-Source Voltage.
, BODY DIODE FORWARD VOLTAGE (V)
GS
4
T
, GATE TO SOURCE VOLTAGE (V)
A
I
T
= 125°C
4.5V
D
A
0.4
, DRAIN CURRENT (A)
= 125°C
8
5.0
0.6
6
25°C
12
6.0V
0.8
-55°C
8
10.0V
16
I
D
1
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= 3.5A
1.2
20
10