FDS8962C Fairchild Semiconductor, FDS8962C Datasheet - Page 8

• Manufacturer Part Number: FDS8962C
• Description: MOSFET N/P-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8962C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms / 0.052 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A, - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8962C

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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
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Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
EnSigna™
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Across the board. Around the world.™
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2
CMOS™
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2
®
C™
®
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This datasheet contains the design specifications for
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PowerEdge™
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RapidConfigure™
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μSerDes™
ScalarPump™
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SMART START™
SPM™
Stealth™
®
®
Definition
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SuperSOT™-6
SuperSOT™-8
SyncFET™
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®
Rev. I19