FDS8962C Fairchild Semiconductor, FDS8962C Datasheet - Page 5

• Manufacturer Part Number: FDS8962C
• Description: MOSFET N/P-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8962C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms / 0.052 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A, - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8962C

FDS8962C Rev. A1
Typical Characteristics: Q1 (N-Channel)
0.01
100
0.1
10
10
8
6
4
2
0
1
0.1
0
R
Figure 9. Maximum Safe Operating Area.
I
DS(ON)
D
Figure 7. Gate Charge Characteristics.
SINGLE PULSE
R
= 7A
θ JA
V
T
GS
A
LIMIT
= 135°C/W
= 25°C
2
= 10V
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
4
1
g
, GATE CHARGE (nC)
DC
10s
6
1s
100ms
V
DS
10ms
= 10V
10
8
1ms
15V
10
100µs
20V
100
12
5
800
600
400
200
50
40
30
20
10
0
0
0.001
0
Figure 8. Capacitance Characteristics.
C
rss
Figure 10. Single Pulse Maximum
0.01
V
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
Power Dissipation.
0.1
C
oss
t
1
, TIME (sec)
10
1
10
C
iss
15
SINGLE PULSE
R
θ JA
100
T
V
f = 1MHz
A
= 135°C/W
GS
= 25°C
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= 0 V
1000
20