RFD16N05LSM9A Fairchild Semiconductor, RFD16N05LSM9A Datasheet - Page 2

• Manufacturer Part Number: RFD16N05LSM9A
• Description: MOSFET N-CH 50V 16A TO-252AA
• Manufacturer: Fairchild Semiconductor

Specifications of RFD16N05LSM9A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 16A, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2V @ 250mA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 16 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RFD16N05LSM9ATR

Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
©2003 Fairchild Semiconductor Corporation
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage
Diode Reverse Recovery Time
Derate Above 25
1. T
2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature.
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
= 25
o
C to 125
PARAMETER
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
T
C
= 25
T
C
= 25
o
C, Unless Otherwise Specified
o
C, Unless Otherwise Specified
SYMBOL
SYMBOL
V
Q
r
BV
t
Q
V
DS(ON)
t
d(OFF)
t
GS(TH)
Q
R
I
t
d(ON)
R
I
(OFF)
g(TOT)
t
GSS
(ON)
SD
DSS
g(TH)
rr
g(5)
t
DSS
t
r
f
JC
JA
I
I
V
V
V
I
I
V
V
Figures 15, 16
V
V
V
SD
I
SD
D
D
D
GS
DS
GS
DD
GS =
GS
GS
GS
= 250mA, V
= 16A, V
= 16A, V
= 16A
= 16A, dI
= V
= 10V, V
= 40V, V
= 25V, I
= 0V to 10V
= 0V to 5V
= 0V to 1V
5V, R
DS
TEST CONDITIONS
TEST CONDITIONS
, I
GS
GS
GS
D
D
SD
GS
GS
DS
= 5V
= 4V
= 8A,
= 250mA, Figure 9
= 12.5
/dt = 100A/ s
J
= 0V
, T
= 0V
= 0V, Figure 10
DGR
STG
pkg
T
V
I
R
Figures 17, 18
DM
GS
DS
D
C
DD
L
D
D
L
= 16A,
= 2.5
= 150
= 40V,
o
C
RFD16N05LSM
RFD16N05L,
MIN
-55 to 150
50
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
0.48
-
-
300
260
50
50
16
45
60
10
RFD16N05L, RFD16N05LSM Rev. B1
TYP
14
30
42
14
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
0.047
0.056
2.083
MAX
100
100
100
MAX
50
60
80
45
125
2
1
3
1.5
-
-
-
-
-
UNITS
W/
UNITS
UNITS
o
o
o
W
o
o
V
V
A
A
V
C
C
C
o
C/W
C/W
nC
nC
nC
nA
ns
ns
ns
ns
ns
ns
ns
C
V
V
V
A
A