RFD16N05LSM9A Fairchild Semiconductor, RFD16N05LSM9A Datasheet - Page 4

• Manufacturer Part Number: RFD16N05LSM9A
• Description: MOSFET N-CH 50V 16A TO-252AA
• Manufacturer: Fairchild Semiconductor

Specifications of RFD16N05LSM9A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 16A, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2V @ 250mA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 16 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RFD16N05LSM9ATR

Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
FIGURE 9. NORMALIZED GATE THRESHOLD vs JUNCTION
2000
1600
1200
800
400
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
-50
4
0
V
I
I
V
D
GS
D
DS
= 250 A
= 16V
= V
VOLTAGE AND DRAIN CURRENT
TEMPERATURE
= 15V
DS
V
0
5
V
T
DS,
GS
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
5
50
10
C
C
C
ISS
RSS
OSS
= C
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX.
= C
100
GS
15
C
GD
DS
+ C
Unless Otherwise Specified (Continued)
+ C
6
GD
GD
o
C)
150
20
V
f = 1MHz
GS
C
C
C
ISS
RSS
OSS
= 0V
200
25
7
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
12.5
37.5
50
2.5
2.0
1.5
1.0
0.5
25
1.4
1.2
1.0
0.8
0.6
0
0
-50
0
-50
I
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX.
D
I
D
= 16A
V
= 250 A
DD
RESISTANCE vs JUNCTION TEMPERATURE
VOLTAGE vs JUNCTION TEMPERATURE
20
CONSTANT GATE CURRENT
= BV
I G REF
------------------------ -
I G ACT
0
0
T
T
J
DSS
DRAIN SOURCE VOLTAGE
PLATEAU VOLTAGES IN
DESCENDING ORDER:
J
, JUNCTION TEMPERATURE (
R
, JUNCTION TEMPERATURE (
L
I
V
V
V
V
G(REF)
= 3.125
DD
DD
DD
DD
VOLTAGE
t, TIME ( s)
SOURCE
= BV
= 0.75 BV
= 0.50 BV
= 0.25 BV
50
50
GATE
= 0.60mA
DSS
V
GS
RFD16N05L, RFD16N05LSM Rev. B1
DSS
DSS
DSS
= 5V
100
100
V
80
DD
I G REF
------------------------ -
I G ACT
= BV
o
o
C)
DSS
C)
150
150
10
8
6
4
2
0
200
200