FDP030N06 Fairchild Semiconductor, FDP030N06 Datasheet - Page 2

• Manufacturer Part Number: FDP030N06
• Description: MOSFET N-CH 60V 120A TO220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP030N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.2 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 9815pF @ 25V
• Power - Max: 231W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 m Ohms at 10 V
• Forward Transconductance Gfs (max / Min): 154 S
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 120 A to 136 A
• Power Dissipation: 231 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP030N06 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.51mH, I
3. I
4. Pulse Test: Pulse width
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
T
Device Marking
Symbol
DSS
J
DSS
FDP030N06
75A, di/dt
AS
= 75A, V
450A/ s, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
300 s, Duty Cycle
= 50V, R
DD
BV
FDP030N06
DSS
G
Device
= 25 , Starting T
Parameter
, Starting T
2%
J
T
= 25 C
C
J
= 25
= 25 C
o
C unless otherwise noted
Package
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
V
V
f = 1MHz
V
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
DS
GS
F
= 250 A, V
= 1mA, Referenced to 25
/dt = 100A/ s
= 48V, V
= 48V, T
= ±20V, V
= 10V, I
= 0V, I
= 0V, I
= V
= 10V, I
= 25V, V
= 48V, I
= 10V
= 30V, I
= 10V, R
DS
2
Test Conditions
, I
SD
SD
D
D
D
Reel Size
D
D
C
GS
GS
GEN
GS
= 75A
= 75A
= 75A
= 75A
= 75A
= 75A
DS
= 250 A
= 150
= 0V
= 0V
= 0V, T
-
= 0V
= 4.7
o
C
C
= 25
o
(Note 4, 5)
(Note 4, 5)
C
(Note 4)
(Note 4)
o
C
Tape Width
-
Min.
2.5
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7380
1095
Typ.
0.05
154
415
116
178
3.5
2.6
46
50
40
35
39
54
33
-
-
-
-
-
-
-
www.fairchildsemi.com
Quantity
Max.
±100
9815
1455
500
625
151
193
772
366
118
1.3
4.5
3.2
87
76
1
-
-
-
-
50
-
-
-
Units
V/
m
nC
nC
nC
nA
pF
pF
pF
ns
nC
ns
ns
ns
ns
V
V
S
A
A
V
o
A
C