MOSFET N-CH 60V 120A TO220

FDP030N06

Manufacturer Part NumberFDP030N06
DescriptionMOSFET N-CH 60V 120A TO220
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDP030N06 datasheet
 

Specifications of FDP030N06

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs3.2 mOhm @ 75A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C120AVgs(th) (max) @ Id4.5V @ 250µA
Gate Charge (qg) @ Vgs151nC @ 10VInput Capacitance (ciss) @ Vds9815pF @ 25V
Power - Max231WMounting TypeThrough Hole
Package / CaseTO-220-3ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)2.6 m Ohms at 10 V
Forward Transconductance Gfs (max / Min)154 SDrain-source Breakdown Voltage60 V
Continuous Drain Current120 A to 136 APower Dissipation231 W
Maximum Operating Temperature+ 175 CMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDP030N06
N-Channel PowerTrench
60V, 193A, 3.2m
Features
• R
= 2.6m
( Typ.)@ V
= 10V, I
DS(on)
GS
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R
DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
G
S
D
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Junction to Ambient
JA
©2009 Fairchild Semiconductor Corporation
FDP030N06 Rev. A
®
MOSFET
Description
= 75A
This N-Channel MOSFET is produced using Fairchild Semicon-
D
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
TO-220
o
T
= 25
C unless otherwise noted
C
Parameter
o
-Continuous (T
= 25
C, Silicon Limited)
C
o
-Continuous (T
= 100
C, Silicon Limited)
C
o
-Continuous (T
= 25
C, Package Limited)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
June 2009
D
G
S
Ratings
60
±20
193*
136*
120
(Note 1)
772
(Note 2)
1434
(Note 3)
6
231
1.54
-55 to +175
300
Ratings
0.65
62.5
www.fairchildsemi.com
Units
V
V
A
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDP030N06 Summary of contents

  • Page 1

    ... Symbol R Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2009 Fairchild Semiconductor Corporation FDP030N06 Rev. A ® MOSFET Description = 75A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s advanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

  • Page 2

    ... Repetitive Rating: Pulse width limited by maximum junction temperature 0.51mH 75A 50V Starting 75A, di/dt 450A Starting DSS 4. Pulse Test: Pulse width 300 s, Duty Cycle 5. Essentially Independent of Operating Temperature Typical Characteristics FDP030N06 Rev. A Package Reel Size TO-220 unless otherwise noted C Test Conditions I = 250 1mA, Referenced 48V, V ...

  • Page 3

    ... Drain Current [A] D Figure 5. Capacitance Characteristics 12000 C iss = oss = rss = iss 9000 6000 C oss 3000 C rss 0 0 Drain-Source Voltage [V] DS FDP030N06 Rev. A Figure 2. Transfer Characteristics 400 100 *Notes: 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage o *Note 210 280 350 Figure 6. Gate Charge Characteristics ...

  • Page 4

    ... 175 Single Pulse 0.1 0 Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDP030N06 Rev. A (Continued) Figure 8. On-Resistance Variation 2.0 1.5 1.0 *Notes 10mA D 0.5 100 150 200 Figure 10. Maximum Drain Current 200 150 100 s 100 1ms 10ms 100ms ...

  • Page 5

    ... FDP030N06 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP030N06 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions 9.90 ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 FDP030N06 Rev. A TO-220 0.20 (8.70) 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 7 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 www.fairchildsemi.com ...

  • Page 8

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FPS™ Auto-SPM™ F-PFS™ FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ ...