FDP030N06 Fairchild Semiconductor, FDP030N06 Datasheet - Page 7

• Manufacturer Part Number: FDP030N06
• Description: MOSFET N-CH 60V 120A TO220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP030N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.2 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 9815pF @ 25V
• Power - Max: 231W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 m Ohms at 10 V
• Forward Transconductance Gfs (max / Min): 154 S
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 120 A to 136 A
• Power Dissipation: 231 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP030N06 Rev. A
Mechanical Dimensions
[2.54
2.54TYP
1.27
0.20
0.10
]
ø3.60
10.00
9.90
(8.70)
0.20
0.10
0.20
[2.54
1.52
0.80
2.54TYP
0.10
0.10
0.20
TO-220
]
7
0.50
+0.10
–0.05
2.40
4.50
1.30
www.fairchildsemi.com
+0.10
–0.05
0.20
0.20