FDP030N06 Fairchild Semiconductor, FDP030N06 Datasheet - Page 4

MOSFET N-CH 60V 120A TO220

FDP030N06

Manufacturer Part Number
FDP030N06
Description
MOSFET N-CH 60V 120A TO220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP030N06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.2 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
151nC @ 10V
Input Capacitance (ciss) @ Vds
9815pF @ 25V
Power - Max
231W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.6 m Ohms at 10 V
Forward Transconductance Gfs (max / Min)
154 S
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
120 A to 136 A
Power Dissipation
231 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP030N06
Manufacturer:
SUPERTEX
Quantity:
5 000
Part Number:
FDP030N06
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP030N06 Rev. A
Typical Performance Characteristics
10000
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1000
100
1.2
1.1
1.0
0.9
0.1
10
-100
1
0.1
Operation in This Area
is Limited by R
*Notes:
1. T
2. T
3. Single Pulse
-50
C
J
vs. Temperature
= 175
= 25
T
V
J
, Junction Temperature
DS
o
C
o
1
, Drain-Source Voltage [V]
C
0
DS(on)
0.01
0.1
1
10
0.05
0.5
0.2
0.1
0.02
Single pulse
0.01
-5
50
10
100
Figure 11. Transient Thermal Response Curve
10
*Notes:
[
1. V
2. I
-4
o
C
D
150
]
GS
= 10mA
10ms
100ms
100
100 s
1ms
DC
= 0V
Rectangular Pulse Duration [sec]
200
300
10
-3
(Continued)
10
-2
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
200
150
100
2.0
1.5
1.0
0.5
50
0
-100
25
10
*Notes:
Limited by package
-1
1. Z
2. Duty Factor, D= t
3. T
P
DM
JM
-50
50
JC
(t) = 0.65
- T
T
vs. Temperature
T
J
vs. Case Temperature
C
, Junction Temperature
C
, Case Temperature
= P
t
10
1
75
t
DM
0
2
0
o
C/W Max.
* Z
1
/t
JC
2
100
50
(t)
10
1
125
100
[
o
C
*Notes:
[
]
1. V
2. I
o
C
150
D
150
]
GS
= 75A
www.fairchildsemi.com
= 10V
175
200

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