FDPF7N50 Fairchild Semiconductor, FDPF7N50 Datasheet - Page 3

• Manufacturer Part Number: FDPF7N50
• Description: MOSFET N-CH 500V 7A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF7N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 16.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Power - Max: 31.3W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 31300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP7N50/FDPF7N50 REV. A
Typical Performance Characteristics
1000
2.5
2.0
1.5
1.0
0.5
0.0
20
15
10
100
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
5
0
10
Figure 1. On-Region Characteristics
0
0
10
Top :
Bottom :
0
Drain Current and Gate Voltage
10.0 V
5.0 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
10
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
, Drain Current [A]
V
20
GS
C
C
C
iss
oss
rss
= 10V
10
30
10
1
V
GS
C
C
C
iss
oss
rss
= 20V
= C
= C
= C
15
* Note : T
* Notes :
gs
ds
gd
1. 250
2. T
+ C
+ C
* Notes :
40
C
1. V
2. f = 1 MHz
gd
gd
= 25
μ
(C
J
s Pulse Test
GS
= 25
ds
o
= 0 V
= shorted)
C
o
C
20
50
3
10
10
10
10
10
12
10
10
10
8
6
4
2
0
-1
-2
Figure 2. Transfer Characteristics
1
0
Figure 4. Body Diode Forward Voltage
-1
Figure 6. Gate Charge Characteristics
1
0
0
0.2
2
Variation vs. Source Current
0.4
150
25
0.6
4
and Temperature
o
150
o
V
C
C
V
Q
GS
SD
o
G
C
5
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
25
, Source-Drain Voltage [V]
o
0.8
C
V
DS
V
DS
= 400V
V
DS
= 250V
1.0
= 100V
6
-55
o
1.2
C
10
* Notes :
* Note:
1. V
2. 250
1. V
2. 250
* Note : I
1.4
8
GS
DS
μ
μ
= 0V
= 40V
s Pulse Test
s Pulse Test
www.fairchildsemi.com
D
= 7 A
1.6
1.8
15
10