FDPF7N50 Fairchild Semiconductor, FDPF7N50 Datasheet - Page 5

• Manufacturer Part Number: FDPF7N50
• Description: MOSFET N-CH 500V 7A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF7N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 16.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Power - Max: 31.3W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 31300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP7N50/FDPF7N50 REV. A
Figure 11-2. Transient Thermal Response Curve - FDPF7N50
Figure 11-1. Transient Thermal Response Curve - FDP7N50
1 0
1 0
1 0
1 0
1 0
1 0
-1
-2
-1
-2
1 0
0
0
1 0
-5
-5
D = 0 .5
0 .0 5
0 .0 2
D = 0 .5
0 .0 1
0 .1
0 .0 5
0 .0 2
0 .2
0 .0 1
0 .1
0 .2
1 0
1 0
s in g le p u ls e
s in g le p u ls e
-4
-4
t
t
1
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
-3
-3
5
1 0
1 0
-2
-2
* N o te s :
* N o te s :
P
1 . Z
2 . D u ty F a c to r, D = t
3 . T
P
1 . Z
2 . D u ty F a c to r, D = t
3 . T
DM
DM
1 0
1 0
θ
J M
θ
J M
JC
JC
-1
-1
(t) = 1 .4
(t) = 3 .2
- T
- T
C
C
t
= P
= P
t
1
1
t
t
2
2
D M
D M
o
o
C /W M a x.
C /W M a x.
* Z
* Z
1 0
1 0
1
1
θ
/t
θ
/t
J C
JC
2
2
0
0
(t)
(t)
1 0
1 0
1
1
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