FDPF7N50 Fairchild Semiconductor, FDPF7N50 Datasheet - Page 4

• Manufacturer Part Number: FDPF7N50
• Description: MOSFET N-CH 500V 7A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF7N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 16.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Power - Max: 31.3W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 31300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP7N50/FDPF7N50 REV. A
Typical Performance Characteristics
Figure 10. Maximum Drain Current Vs. Case Temperature
Figure 7. Breakdown Voltage Variation
Figure 9-1. Maximum Safe Operating Area
10
10
10
10
8
6
4
2
0
-1
-2
1.2
1.1
1.0
0.9
0.8
1
0
25
10
-100
0
Operation in This Area
is Limited by R
-50
50
- FDP7N50
vs. Temperature
V
T
T
DS
J
, Junction Temperature [
C
, Drain-Source Voltage [V]
DS(on)
, Case Temperature [
10
0
1
75
50
100
* Notes :
100
100 ms
1. T
2. T
3. Single Pulse
DC
o
10 ms
C]
10
C
J
o
C]
= 150
= 25
2
*Notes :
1. V
2. I
1 ms
o
C
o
C
D
125
GS
= 250
150
100 us
= 0 V
μ
A
10 us
200
(Continued)
150
4
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
Figure 8. On-Resistance Variation
1
0
Figure 9-2. Maximum Safe Operating Area
10
-100
0
-50
Operation in This Area
is Limited by R
- FDPF7N50
V
vs. Temperature
T
DS
J
, Junction Temperature [
, Drain-Source Voltage [V]
DS(on)
10
0
1
50
DC
* Notes :
100 ms
100
1. T
2. T
3. Single Pulse
10
o
C
J
C]
10 ms
= 150
= 25
2
1 ms
o
C
o
C
∗
Notes :
1. V
2. I
150
100 us
www.fairchildsemi.com
D
GS
= 3.5 A
= 10 V
10 us
200