MOSFET N-CH 250V 33A TO-3PN

FDA33N25

Manufacturer Part NumberFDA33N25
DescriptionMOSFET N-CH 250V 33A TO-3PN
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDA33N25 datasheet
 

Specifications of FDA33N25

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs94 mOhm @ 16.5A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C33AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs46.8nC @ 10VInput Capacitance (ciss) @ Vds2200pF @ 25V
Power - Max245WMounting TypeThrough Hole
Package / CaseTO-3PN-3ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.094 Ohms
Drain-source Breakdown Voltage250 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current33 APower Dissipation245 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDA33N25
N-Channel MOSFET
250V, 33A, 0.094Ω
Features
• R
= 0.088Ω ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 36nC)
• Low C
( Typ. 35pF)
rss
• Fast switching
• Improved dv/dt capability
• RoHS compliant
G
D
S
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Sink Typ.
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDA33N25 Rev. A
Description
= 16.5A
These N-Channel enhancement mode power field effect transis-
D
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
TO-3PN
o
T
= 25
C unless otherwise noted
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
September 2007
UniFET
D
G
S
Ratings
250
±30
33
21
(Note 1)
132
(Note 2)
918
(Note 1)
33
(Note 1)
24.6
(Note 3)
4.5
245
1.96
-55 to +150
300
Ratings
0.51
0.24
40
www.fairchildsemi.com
TM
tm
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDA33N25 Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDA33N25 Rev. A Description = 16.5A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

  • Page 2

    ... Starting ≤ 33A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA33N25 Rev. A Package Reel Size TO-3PN - unless otherwise noted C Test Conditions I = 250µA, V ...

  • Page 3

    ... Drain Current [A] D Figure 5. Capacitance Characteristics 4000 C iss = oss = oss C rss = C gd 3000 C iss 2000 1000 C rss 0 0 Drain-Source Voltage [V] DS FDA33N25 Rev. A Figure 2. Transfer Characteristics 200 100 10 *Notes: 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 500 100 20V ...

  • Page 4

    ... Limited by R DS(on) *Notes: 0 Single Pulse 0. Drain-Source Voltage [ 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDA33N25 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 250 µ 0.0 100 150 200 -100 Figure 10. Maximum Drain Current ...

  • Page 5

    ... FDA33N25 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDA33N25 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions FDA33N25 Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 8

    ... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA33N25 Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ Programmable Active Droop™ ...