PSMN2R0-30YL,115 NXP Semiconductors, PSMN2R0-30YL,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN2R0-30YL,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN2R0-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3980pF @ 12V
• Power - Max: 97W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 97 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4679-2; 934063069115; PSMN2R0-30YL T/R

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN2R0-30YL
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
R
(mΩ)
DSon
80
(A)
60
40
20
I
7
6
5
4
3
2
1
D
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Characteristics
V
GS
Parameter
source-drain voltage
reverse recovery time
recovered charge
(V) = 3 V
50
1
T
…continued
j
= 150 °C
4
10
100
2
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
I
GS
D
DS
003aac470
003aac475
= 25 A; V
= 20 A; dI
(A)
25 °C
(V)
Figure 17
= 20 V
150
3
Rev. 4 — 10 March 2011
GS
S
/dt = -100 A/µs; V
= 0 V; T
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
Fig 6.
Fig 8.
j
= 25 °C;
160
140
120
100
(S)
g
150
100
(A)
80
60
40
I
50
fs
D
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
GS
0
0
10
= 0 V;
4
2
20
PSMN2R0-30YL
4
Min
-
-
-
40
V
GS
6
(V) = 3
Typ
0.78
43
49
60
© NXP B.V. 2011. All rights reserved.
8
003aac474
003aac477
I
D
V
(A)
DS
2.8
2.6
Max
1.2
-
-
2.4
2.2
(V)
10
80
Unit
V
ns
nC
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