PSMN2R0-30YL,115 NXP Semiconductors, PSMN2R0-30YL,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN2R0-30YL,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN2R0-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3980pF @ 12V
• Power - Max: 97W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 97 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4679-2; 934063069115; PSMN2R0-30YL T/R

NXP Semiconductors
PSMN2R0-30YL
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(pF)
10
10
10
10
10
10
8000
6000
4000
2000
(A)
C
I
D
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Input and reverse transfer capacitances as a
0
0
2
min
1
4
C
C
iss
rss
6
typ
2
V
All information provided in this document is subject to legal disclaimers.
8
GS
003aac480
003aab271
V
max
(V)
GS
(V)
10
3
Rev. 4 — 10 March 2011
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
V
R
(mΩ)
GS (th)
(V)
DSon
3.5
2.5
1.5
4
3
2
3
2
1
0
-60
of gate-source voltage; typical values
junction temperature
2
4
0
PSMN2R0-30YL
max
typ
min
60
6
120
8
© NXP B.V. 2011. All rights reserved.
V
003aac476
003a a c337
T
GS
j
(°C)
(V)
180
10
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