FQPF9N25C Fairchild Semiconductor, FQPF9N25C Datasheet - Page 4

• Manufacturer Part Number: FQPF9N25C
• Description: MOSFET N-CH 250V 8.8A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF9N25C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8.8 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
Figure 9-1. Maximum Safe Operating Area
10
10
10
10
1.2
1.1
1.0
0.9
0.8
8
6
4
2
0
-1
25
2
1
0
-100
10
Figure 7. Breakdown Voltage Variation
0
Figure 10. Maximum Drain Current
※
1. T
2. T
3. Single Pulse
Notes :
C
J
= 150
= 25
-50
50
o
C
o
C
vs Case Temperature
Operation in This Area
is Limited by R
V
T
T
vs Temperature
J
DS
C
, Junction Temperature [
for FQP9N25C
, Case Temperature [ ]
, Drain-Source Voltage [V]
0
10
75
1
DS(on)
50
DC
100
10 ms
(Continued)
100
℃
1 ms
o
C]
10
※
1. V
2. I
100
2
125
Notes :
D
GS
= 250 µA
µ
150
= 0 V
s
150
200
10
10
10
10
-1
Figure 9-2. Maximum Safe Operating Area
2
1
0
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-100
※
1. T
2. T
3. Single Pulse
Notes :
Figure 8. On-Resistance Variation
C
J
= 25
= 150
o
-50
C
o
C
Operation in This Area
is Limited by R
V
DS
T
for FQPF9N25C
, Drain-Source Voltage [V]
J
vs Temperature
, Junction Temperature [
10
0
1
DS(on)
50
DC
10 ms
100
1 ms
o
C]
10
100
2
µ
※
10
s
1. V
2. I
Notes :
150
µ
D
s
GS
= 4.4 A
= 10 V
Rev. A, March 2004
200