MOSFET N-CH 500V 12A TO-220F

FDPF13N50FT

Manufacturer Part NumberFDPF13N50FT
DescriptionMOSFET N-CH 500V 12A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF13N50FT datasheet
 

Specifications of FDPF13N50FT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs540 mOhm @ 6A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C12AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs39nC @ 10VInput Capacitance (ciss) @ Vds1930pF @ 25V
Power - Max42WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.54 Ohm @ 10 V
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current12 APower Dissipation42000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP13N50F / FDPF13N50FT
N-Channel MOSFET
500V, 12A, 0.54Ω
Features
• R
= 0.42Ω ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 30nC)
• Low C
( Typ. 14.5pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
TO-220
FDP Series
G
D
S
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Sink Typ.
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP13N50F / FDPF13N50FT Rev. A
Description
= 6A
These N-Channel enhancement mode power field effect
D
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
September 2007
UniFET
D
G
S
FDP13N50F FDPF13N50FT
500
±30
12
12*
7.2
7.2*
(Note 1)
48
48*
(Note 2)
684
(Note 1)
12
(Note 1)
19.5
(Note 3)
4.5
195
42
1.53
0.33
-55 to +150
300
FDP13N50F FDPF13N50FT
0.65
3.0
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
switching
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF13N50FT Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP13N50F / FDPF13N50FT Rev. A Description = 6A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Starting ≤ 12A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP13N50F / FDPF13N50FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 3000 C iss = oss C oss = rss = iss 1500 C rss 0 0 Drain-Source Voltage [V] DS FDP13N50F / FDPF13N50FT Rev. Figure 2. Transfer Characteristics *Notes: 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 100 V = 20V GS o *Note Figure 6. Gate Charge Characteristics ...

  • Page 4

    ... T , Junction Temperature J Figure 9. Maximum Drain Current vs. Case Temperature Case Temperature C Figure 10. Transient Thermal Response Curve - FDPF13N50FT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP13N50F / FDPF13N50FT Rev. (Continued) Figure 8. Maximum Safe Operating Area 100 0.1 *Notes µ ...

  • Page 5

    ... FDP13N50F / FDPF13N50FT Rev. Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP13N50F / FDPF13N50FT Rev. Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions 9.90 ø3.60 ±0.10 1.27 2.54TYP ±0.20 [2.54 ] 10.00 FDP13N50F / FDPF13N50FT Rev. TO-220 ±0.20 (8.70) ±0.10 ±0.10 1.52 ±0.10 0.80 2.54TYP ±0.20 [2.54 ] ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 0.50 ±0.20 2.40 –0.05 www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP ±0.20 [2.54 ] 9.40 FDP13N50F / FDPF13N50FT Rev. TO-220F ±0.20 ±0.10 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 8 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP13N50F / FDPF13N50FT Rev. Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...