MOSFET N-CH 650V 15A TO-220F

FDPF15N65

Manufacturer Part NumberFDPF15N65
DescriptionMOSFET N-CH 650V 15A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF15N65 datasheet
 

Specifications of FDPF15N65

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs440 mOhm @ 7.5A, 10VDrain To Source Voltage (vdss)650V
Current - Continuous Drain (id) @ 25° C15AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs63nC @ 10VInput Capacitance (ciss) @ Vds3095pF @ 25V
Power - Max38.5WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.44 Ohms
Drain-source Breakdown Voltage650 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current7 APower Dissipation38.5 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP15N65 / FDPF15N65
650V N-Channel MOSFET
Features
• 15A, 650V, R
= 0.44Ω @V
DS(on)
GS
• Low gate charge ( typical 48.5 nC)
• Low C
( typical 23.6 pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220
G
D
S
FDP Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink
θCS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP15N65 / FDPF15N65 Rev. B
Description
= 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
April 2007
UniFET
D
G
S
FDP15N65
FDPF15N65
Unit
650
15
15*
9.5
9.5*
60
60*
± 30
637
15
25.0
4.5
250
38.5
2.0
0.3
-55 to +150
300
FDP15N65
FDPF15N65
0.5
3.3
0.5
--
62.5
62.5
www.fairchildsemi.com
TM
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W

FDPF15N65 Summary of contents

  • Page 1

    ... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP15N65 / FDPF15N65 Rev. B Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Starting ≤ 15A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP15N65 / FDPF15N65 Rev. B Package Reel Size TO-220 -- TO-220F -- T = 25°C unless otherwise noted C Conditions 250μ ...

  • Page 3

    ... V = 10V GS 0.4 0.2 0 Drain Current [A] D Figure 5. Capacitance Characteristics 5000 C 4000 oss C iss 3000 2000 C 1000 rss Drain-Source Voltage [V] DS FDP15N65 / FDPF15N65 Rev. B Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 20V Note : 0 Figure 6. Gate Charge Characteristics ...

  • Page 4

    ... Figure 8. On-Resistance Variation 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 * Notes : 0 250 μ A 0.5 D 0.0 0.0 100 150 200 -100 -100 o C] Figure 9-2. Safe Operating Area for FDPF15N65 2 10 μ 100 μ 100 Notes : 150 Single Pulse ...

  • Page 5

    ... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP15N65 Figure 11-2. Transient Thermal Response Curve for FDPF15N65 FDP15N65 / FDPF15N65 Rev. B (Continued tio tio θ θ θ θ www.fairchildsemi.com ...

  • Page 6

    ... Unclamped Inductive Switching Test Circuit & Waveforms FDP15N65 / FDPF15N65 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP15N65 / FDPF15N65 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP15N65 / FDPF15N65 Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP15N65 / FDPF15N65 Rev. B (Continued) TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP15N65 / FDPF15N65 Rev. B i-Lo™ Power-SPM™ ® ImpliedDisconnect™ PowerTrench IntelliMAX™ Programmable Active Droop™ ® ISOPLANAR™ QFET MICROCOUPLER™ ...