MOSFET N-CH 250V 62A TO-3P

FQA62N25C

Manufacturer Part NumberFQA62N25C
DescriptionMOSFET N-CH 250V 62A TO-3P
ManufacturerFairchild Semiconductor
SeriesQFET™
FQA62N25C datasheet
 

Specifications of FQA62N25C

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs35 mOhm @ 31A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C62AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs130nC @ 10VInput Capacitance (ciss) @ Vds6280pF @ 25V
Power - Max298WMounting TypeThrough Hole
Package / CaseTO-3PN-3ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.035 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)55 SDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current62 A
Power Dissipation298000 mWMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Continuous Drain Current Id62ADrain Source Voltage Vds250V
On Resistance Rds(on)35mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FQA62N25C
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
G
D
S
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
- Continuous (T
Drain Current
D
- Continuous (T
I
Drain Current
- Pulsed
DM
V
Gate-Source Voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation (T
D
- Derate above 25°C
T
, T
Operating and Storage Temperature Range
J
STG
Maximum lead temperature for soldering purposes,
T
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink
θCS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2004 Fairchild Semiconductor Corporation
Features
• 62A, 250V, R
• Low gate charge ( typical 100 nC)
• Low Crss ( typical 63.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-3PN
FQA Series
T
= 25°C unless otherwise noted
C
Parameter
= 25°C)
C
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 25°C)
C
Parameter
QFET
= 0.035Ω @V
= 10 V
DS(on)
GS
D
G
S
FQA62N25C
Units
250
62
39
248
± 30
2300
mJ
62
29.8
mJ
5.5
V/ns
298
2.38
W/°C
-55 to +150
°C
300
Typ
Max
Units
--
0.42
°C/W
0.24
--
°C/W
--
40
°C/W
Rev. A, March 2004
®
V
A
A
A
V
A
W
°C

FQA62N25C Summary of contents

  • Page 1

    ... C Parameter QFET = 0.035Ω DS(on ● ● ◀ ◀ ▲ ▲ G ● ● ● ● S FQA62N25C Units 250 62 39 248 ± 30 2300 mJ 62 29.8 mJ 5.5 V/ns 298 2.38 W/°C -55 to +150 °C 300 Typ Max Units -- 0.42 ° ...

  • Page 2

    ... G ≤ 62A, di/dt ≤ 300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...

  • Page 3

    ... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 10000 8000 C iss 6000 C oss 4000 2000 ※ Notes : rss MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation Notes : ※ 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 20V GS ※ ...

  • Page 4

    ... DC Notes : ※ 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2004 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 Notes : ※ 0 250 µA D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation µ s 100 µ Figure 10. Maximum Drain Current ※ ...

  • Page 5

    ... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

  • Page 6

    ... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

  • Page 7

    ... Mechanical Dimensions ©2004 Fairchild Semiconductor Corporation TO-3PN Dimensions in Millimeters Rev. A, March 2004 ...

  • Page 8

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...