PSMN035-150B,118 NXP Semiconductors, PSMN035-150B,118 Datasheet - Page 2

• Manufacturer Part Number: PSMN035-150B,118
• Description: MOSFET N-CH 150V 50A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055717118::PSMN035-150B /T3::PSMN035-150B /T3

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN035-150B_4
Product data sheet
Pin
1
2
3
mb
Type number
PSMN035-150B
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
AS
stg
j
DS
DGR
GS
tot
DS(AL)S
It is not possible to make connection to pin 2.
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
non-repetitive
avalanche current
Package
Name
D2PAK
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
Conditions
T
T
T
T
t
T
T
t
V
unclamped; t
V
R
p
p
j
j
mb
mb
mb
mb
GS
sup
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≤ 175 °C; T
= 100 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C
= 10 V; T
= 50 Ω; unclamped; see
≤ 50 V; V
Rev. 04 — 17 November 2009
j
p
≤ 175 °C
j
j(init)
GS
= 0.1 ms; R
≥ 25 °C; R
= 10 V; T
Figure 1
Figure 3
[1]
= 25 °C; I
Figure 1
mb
mb
N-channel TrenchMOS SiliconMAX standard level FET
= 25 °C; see
= 25 °C
Simplified outline
GS
GS
j(init)
and
D
and
= 20 kΩ
= 50 Ω; see
= 47 A; V
Figure 4
SOT404 (D2PAK)
= 25 °C;
2
2
1
Figure 2
mb
2
sup
3
Figure 4
≤ 50 V;
PSMN035-150B
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
150
150
20
36
50
200
250
175
175
50
200
460
50
D
Version
SOT404
S
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
A
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