PSMN035-150B,118 NXP Semiconductors, PSMN035-150B,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN035-150B,118
• Description: MOSFET N-CH 150V 50A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055717118::PSMN035-150B /T3::PSMN035-150B /T3

NXP Semiconductors
PSMN035-150B_4
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
Ciss,
Coss,
Crss
(pF)
10
10
10
3
4
2
as a function of drain-source voltage; typical
values
10
−1
1
10
Ciss
Coss
Crss
V
DS
003aaa026
(V)
Rev. 04 — 17 November 2009
10
2
N-channel TrenchMOS SiliconMAX standard level FET
Fig 15. Source current as a function of source-drain
(A)
I
S
50
45
40
35
30
25
20
15
10
5
0
voltage; typical values
0
0.2
0.4
T
PSMN035-150B
j
= 175 °C
0.6
0.8
T
© NXP B.V. 2009. All rights reserved.
j
1.0
= 25 °C
V
003aaa027
SD
(V)
1.2
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