PSMN035-150B,118 NXP Semiconductors, PSMN035-150B,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN035-150B,118
• Description: MOSFET N-CH 150V 50A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055717118::PSMN035-150B /T3::PSMN035-150B /T3

NXP Semiconductors
PSMN035-150B_4
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
0.8
0.6
4.5
3.5
2.5
1.5
0.5
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
1.0
3.0
2.0
4
3
2
1
0
−60
junction temperature
factor as a function of junction temperature
−40
−20
0
20
40
60
80
max
typ
min
100
T
120
j
(°C)
T
j
140
003aaa023
003aaa022
(°C)
160
Rev. 04 — 17 November 2009
180
N-channel TrenchMOS SiliconMAX standard level FET
Fig 11. Drain-source on-state resistance as a function
Fig 13. Gate-source voltage as a function of gate
V
R
(V)
GS
DSon
(Ω)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
10
8
6
4
2
0
0
of drain current; typical values
charge; typical values
0
0
4.4 V
I
T
D
j
= 25 °C
= 50 A
4.6 V
5
4.8 V
20
10
5.0 V
PSMN035-150B
V
DD
15
40
= 30 V
5.2 V
20
5.4 V
V
60
DD
© NXP B.V. 2009. All rights reserved.
V
GS
Q
25
003aaa021
003aaa028
G
= 120 V
6.0 V
= 8 V
I
(nC)
D
(A)
30
80
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