PSMN035-150B,118 NXP Semiconductors, PSMN035-150B,118 Datasheet - Page 5

• Manufacturer Part Number: PSMN035-150B,118
• Description: MOSFET N-CH 150V 50A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055717118::PSMN035-150B /T3::PSMN035-150B /T3

NXP Semiconductors
6. Characteristics
Table 6.
PSMN035-150B_4
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
T
V
R
I
see
I
V
D
D
D
D
S
S
j
j
j
DS
DS
GS
GS
GS
GS
DS
DS
DS
G(ext)
DS
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 50 A; V
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 A; V
= 20 A; dI
Figure 10
Figure 10
Figure 11
Figure 11
Figure 15
= 150 V; V
= 150 V; V
= 25 V; V
= 25 V; V
= 75 V; R
= 30 V; T
= 10 V; V
= -10 V; V
= 10 V; I
= 10 V; I
= 5.6 Ω; T
Rev. 04 — 17 November 2009
GS
DS
S
DS
DS
D
D
/dt = -100 A/µs; V
j
GS
GS
DS
L
GS
and
and
DS
= 25 °C
= 25 A; T
= 25 A; T
= 120 V; V
= 0 V; T
GS
GS
= V
= V
Figure 13
Figure 14
Figure 13
= 1.5 Ω; V
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
j
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
12
12
GS
GS
; T
; T
N-channel TrenchMOS SiliconMAX standard level FET
j
= 25 °C;
j
j
j
j
j
= 175 °C;
= 25 °C;
= 175 °C;
= 25 °C;
j
GS
j
GS
= 25 °C
j
j
= 25 °C
= 25 °C
= 25 °C
= 175 °C
= 10 V;
= 10 V;
GS
= 0 V;
PSMN035-150B
Min
150
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
0.05
-
2
2
-
30
79
17
33
4720
456
208
25
138
79
93
0.85
118
0.66
© NXP B.V. 2009. All rights reserved.
Max
-
-
4
10
500
100
100
98
35
-
-
45
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
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