PSMN035-150B,118 NXP Semiconductors, PSMN035-150B,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN035-150B,118
• Description: MOSFET N-CH 150V 50A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055717118::PSMN035-150B /T3::PSMN035-150B /T3

NXP Semiconductors
PSMN035-150B_4
Product data sheet
Fig 1.
Fig 3.
P
(%)
(%)
I
der
der
120
120
80
40
80
40
0
0
function of mounting base temperature
function of mounting base temperature
Normalized continuous drain current as a
Normalized total power dissipation as a
0
0
50
50
100
100
150
150
T
T
mb
mb
03aa24
03aa16
(°C)
(°C)
Rev. 04 — 17 November 2009
200
200
N-channel TrenchMOS SiliconMAX standard level FET
Fig 2.
Fig 4.
(A)
I
(A)
I
AS
D
10
10
10
10
10
1
1
3
2
2
10
currents as a function of drain-source volt
as a function of pulse duration
Safe operating area; continuous and peak drain
Non-repetitive avalanche ruggedness current
1
−3
P
R
DSon
T
j
t
p
prior to avalanche = 150 °C
= V
T
10
DS
−2
d =
/ I
10
D
T
t
t
p
PSMN035-150B
10
D.C.
−1
10
2
25 °C
100 ms
V
1
t
© NXP B.V. 2009. All rights reserved.
100 μs
10 ms
p
1 ms
DS
= 10 μs
003aaa016
003aaa017
t
p
(V)
(ms)
10
10
3
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