FQI1P50TU Fairchild Semiconductor, FQI1P50TU Datasheet

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FQI1P50TU

Manufacturer Part Number
FQI1P50TU
Description
MOSFET P-CH 500V 1.5A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQI1P50TU

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10.5 Ohm @ 750mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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©2008 Fairchild Semiconductor International
FQB1P50 / FQI1P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for electronic lamp ballasts based on the
complementary half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
resistance,
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
provide
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
superior
= 25°C) *
Parameter
= 25°C)
Parameter
G
D
T
S
C
C
C
switching
= 25°C unless otherwise noted
= 25°C)
= 100°C)
1
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -1.5A, -500V, R
• Low gate charge ( typical 11 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
FQI Series
I
2
-PAK
FQB1P50 / FQI1P50
Typ
--
--
--
DS(on)
-55 to +150
= 10.5
-0.95
-500
3.13
0.51
-1.5
-6.0
-1.5
-4.5
300
110
6.3
63
G
30
! ! ! !
! ! ! !
@V
Max
1.98
62.5
40
GS
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
= -10 V
October 2008
QFET
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
Rev. A3, Oct 2008
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQI1P50TU

FQI1P50TU Summary of contents

Page 1

... JC R Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor International Features • -1.5A, -500V, R • Low gate charge ( typical 11 nC) • Low Crss ( typical 6.0 pF) • Fast switching superior switching • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 88mH -1.5A -50V -1.5A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -500 -400 125° ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 600 500 400 300 200 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor International 0 10 ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ Figure 2. Transfer Characteristics 0 10 ※ Note : T = 25℃ J ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor International (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 1.5 1.2 100 0.9 DC 0.6 0.3 0 Figure 10 ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2008 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor International + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions ©2008 Fairchild Semiconductor International PAK Dimensions in Millimeters 7 Rev. A3, Oct 2008 ...

Page 8

... Package Dimensions (Continued) ©2008 Fairchild Semiconductor International PAK Dimensions in Millimeters 8 Rev. A3, Oct 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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