HUF76629D3 Fairchild Semiconductor, HUF76629D3 Datasheet
HUF76629D3
Specifications of HUF76629D3
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HUF76629D3 Summary of contents
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... Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs R Ordering Information PART NUMBER HUF76629D3 HUF76629D3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76629D3ST Unless Otherwise Specified , 0.052 10V ...
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... MIN TYP 100 - o C (Figure 12 0.0415 - 0.046 - 0.047 - - - - - - - 11 - 114 - 6 50V 1.0mA - 1 1285 - 270 - 65 MIN TYP - - - - - - - - HUF76629D3, HUF76629D3S Rev. B MAX UNITS - 250 A 100 0.052 0.054 0.055 o 1.36 C/W o 100 C/W 190 145 190 1 MAX UNITS 1.25 V 1.00 V 110 ns 370 nC ...
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... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 4. 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUF76629D3, HUF76629D3S Rev. B 175 ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 3.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE HUF76629D3, HUF76629D3S Rev + 0 3. 10V 20A GS D 120 ...
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... A D 1.1 1.0 0.9 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE 50V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT V = 10V 50V 20A d(OFF GATE TO SOURCE RESISTANCE ( ) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE HUF76629D3, HUF76629D3S Rev. B 120 160 160 200 20A D = 10A d(ON ...
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... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM HUF76629D3, HUF76629D3S Rev 10V GS t OFF d(OFF 90% 10% 90% 50% ...
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... PSPICE Electrical Model .SUBCKT HUF76629D3 rev 30 July 1999 2.32e 2.32e-9 CIN 6 8 1.22e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 117.89 EDS EGS ESG EVTHRES EVTEMP GATE 1 LDRAIN 2 5 1e-9 LGATE 1 9 3.11e-9 LSOURCE 3 7 3.72e-9 MMED MMEDMOD ...
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... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUF76629D3, HUF76629D3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF76629D3, HUF76629D3S Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...