HUF76629D3 Fairchild Semiconductor, HUF76629D3 Datasheet - Page 5

• Manufacturer Part Number: HUF76629D3
• Description: MOSFET N-CH 100V 20A IPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76629D3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1285pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
250
150
100
3000
1000
200
100
50
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
0
10
1.4
1.2
1.0
0.8
0.4
0.6
0
-80
0.1
V
GS
= 4.5V, V
JUNCTION TEMPERATURE
-40
R
10
GS
V
T
C
DS
, GATE TO SOURCE RESISTANCE ( )
J
DD
OSS
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
t
f
0
= 50V, I
1.0
C
DS
20
40
D
+ C
t
d(OFF)
= 20A
t
r
GD
80
30
V
GS
C
10
V
(Continued)
C
RSS
= V
120
GS
ISS
DS
= 0V, f = 1MHz
o
C)
, I
C
40
C
GD
D
GS
160
= 250 A
t
d(ON)
+ C
GD
200
100
50
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
300
250
200
150
100
10
50
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
8
6
4
2
0
0
1.2
1.1
1.0
0.9
0
0
-80
V
V
GS
DD
I
D
= 10V, V
= 50V
VOLTAGE vs JUNCTION TEMPERATURE
GATE CURRENT
= 250 A
-40
R
10
GS
10
T
, GATE TO SOURCE RESISTANCE ( )
DD
J
, JUNCTION TEMPERATURE (
= 50V, I
Q
0
g
, GATE CHARGE (nC)
20
D
t
d(OFF)
40
= 20A
20
HUF76629D3, HUF76629D3S Rev. B
WAVEFORMS IN
DESCENDING ORDER:
80
30
I
I
D
D
t
f
t
= 20A
= 10A
r
120
30
o
C)
40
t
d(ON)
160
160
200
50
40