HUF76629D3 Fairchild Semiconductor, HUF76629D3 Datasheet - Page 6

• Manufacturer Part Number: HUF76629D3
• Description: MOSFET N-CH 100V 20A IPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76629D3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1285pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Test Circuits and Waveforms
©2001 Fairchild Semiconductor Corporation
VARY t
REQUIRED PEAK I
0V
V
GS
I
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
g(REF)
P
FIGURE 21. SWITCHING TIME TEST CIRCUIT
TO OBTAIN
FIGURE 19. GATE CHARGE TEST CIRCUIT
V
t
GS
P
V
AS
GS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
R
AS
DS
L
DUT
R
DUT
L
0.01
L
-
+
V
DD
+
-
+
-
V
V
DD
DD
I
V
g(REF)
0
0
DD
V
0
0
0
V
V
GS
DS
GS
10%
V
= 1V
GS
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
FIGURE 22. SWITCHING TIME WAVEFORM
FIGURE 20. GATE CHARGE WAVEFORMS
Q
t
d(ON)
90%
Q
gs
g(TH)
50%
t
ON
10%
t
r
I
AS
Q
PULSE WIDTH
Q
V
g(5)
DS
gd
t
P
Q
g(TOT)
BV
t
AV
HUF76629D3, HUF76629D3S Rev. B
DSS
V
GS
= 5V
t
d(OFF)
90%
V
t
OFF
DS
50%
t
f
10%
V
GS
V
90%
DD
= 10V