HUF76633P3 Fairchild Semiconductor, HUF76633P3 Datasheet - Page 3

• Manufacturer Part Number: HUF76633P3
• Description: MOSFET N-CH 100V 38A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76633P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 39A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1820pF @ 25V
• Power - Max: 145W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
500
100
30
0.01
0
0.1
10
0
2
1
10
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
TEMPERATURE
25
V
GS
T
= 10V
50
C
, CASE TEMPERATURE (
10
V
SINGLE PULSE
10
GS
75
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
= 5V
100
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILITY
10
10
-3
150
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
50
40
30
20
10
0
25
CASE TEMPERATURE
50
10
10
-1
V
-1
GS
T
NOTES:
DUTY FACTOR: D = t
PEAK T
C
, CASE TEMPERATURE (
= 4.5V
75
J
= P
V
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
GS
T
I = I
DM
100
C
= 10V
= 25
x Z
25
HUF76633P3, HUF76633S3S Rev. B
o
10
10
JC
P
C
1
o
DM
0
/t
0
C DERATE PEAK
125
x R
2
175 - T
o
JC
150
C)
t
+ T
1
C
t
150
2
C
175
10
10
1
1