FCB11N60FTM Fairchild Semiconductor, FCB11N60FTM Datasheet - Page 2

• Manufacturer Part Number: FCB11N60FTM
• Description: MOSFET N-CH 600V 11A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCB11N60FTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1490pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FCB11N60FTMTR

FCB11N60F Rev. A2
Package Marking and Ordering Information
Electrical Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
ΔBV
/
BV
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
AS
SD
DS(on)
iss
oss
rss
oss
oss
g
gs
gd
rr
DSS
DS
ΔT
= 5.5A, V
≤ 11A, di/dt ≤ 1200A/μs, V
FCB11N60F
DSS
eff.
J
DD
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 50V, R
G
= 25Ω, Starting T
DD
FCB11N60FTM
Parameter
≤ BV
Device
DSS
, Starting T
J
= 25°C
J
T
= 25°C
C
= 25°C unless otherwise noted
Package
D
2
-PAK
V
V
I
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
R
V
V
V
V
dI
D
GS
GS
GS
DS
DS
GS
GS
DS
GS
DS
DS
DS
DS
DD
G
DS
GS
GS
GS
F
= 250μA, Referenced to 25°C
/dt =100A/μs
= 25Ω
= 600V, V
= 480V, T
= V
= 40V, I
= 25V, V
= 480V, V
= 0V to 400V, V
= 480V, I
= 0V, I
= 0V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 300V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
D
D
S
S
D
D
D
Conditions
= 250μA, T
= 250μA, T
= 11A
= 11A
= 11A
GS
DS
D
D
DS
C
= 5.5A
= 5.5A
GS
= 250μA
GS
= 11A
= 11A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
= 0V, f = 1.0MHz
330mm
GS
= 0V
J
J
= 25°C
= 150°C
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
24m
Min
600
3.0
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Typ
1148
0.32
650
700
671
119
120
0.6
9.7
7.2
0.8
63
35
95
34
98
56
40
21
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Quantity
Max Units
1490
-100
0.38
www.fairchildsemi.com
100
100
870
205
250
120
5.0
1.4
10
80
52
11
33
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800
V/°C
μA
μA
nA
nA
nC
nC
nC
μC
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
V
S
A
A
V