FCB11N60FTM Fairchild Semiconductor, FCB11N60FTM Datasheet - Page 3

• Manufacturer Part Number: FCB11N60FTM
• Description: MOSFET N-CH 600V 11A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCB11N60FTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1490pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FCB11N60FTMTR

FCB11N60F Rev. A2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
6000
5000
4000
3000
2000
1000
10
10
10
10
-1
1.0
0.8
0.6
0.4
0.2
0.0
2
1
0
10
0
10
-1
0
-1
Top :
Bottom : 5.5 V
Drain Current and Gate Voltage
15.0 V
10.0 V
5
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
10
C
V
V
rss
DS
C
DS
iss
C
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
oss
10
10
I
D
15
, Drain Current [A]
0
0
20
V
GS
= 10V
25
C
C
C
iss
oss
rss
= C
= C
= C
* Notes :
10
10
1. 250
2. T
30
* Note : T
gs
gd
ds
1
V
1
+ C
+ C
GS
C
= 25
gd
gd
= 20V
* Notes :
μ
s Pulse Test
(C
1. V
2. f = 1 MHz
o
J
ds
C
= 25
35
= shorted)
GS
= 0 V
o
C
40
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
12
10
10
10
8
6
4
2
0
10
10
10
-1
1
0
0.2
0
-1
1
0
2
Variation vs. Source Current
and Temperatue
5
0.4
150
10
o
V
C
4
0.6
Q
SD
V
25
G
GS
15
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
150
o
C
, Gate-Source Voltage [V]
25
o
C
o
0.8
V
C
20
DS
V
DS
V
= 400V
DS
= 250V
= 100V
6
25
1.0
-55
o
C
30
* Notes :
1.2
1. V
2. 250
* Note
* Note : I
1. V
2. 250
GS
35
8
DS
= 0V
μ
s Pulse Test
= 40V
μ
D
www.fairchildsemi.com
s Pulse Test
1.4
= 11A
40
1.6
45
10