FCB11N60FTM Fairchild Semiconductor, FCB11N60FTM Datasheet - Page 5

• Manufacturer Part Number: FCB11N60FTM
• Description: MOSFET N-CH 600V 11A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCB11N60FTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1490pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FCB11N60FTMTR

Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
www.fairchildsemi.com
FCB11N60F Rev. A2