BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 10

• Manufacturer Part Number: BF998,215
• Description: MOSFET NCH DUAL GATE 12V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF998,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1973-2; 934002640215; BF998 T/R

NXP Semiconductors
1996 Aug 01
handbook, halfpage
Silicon N-channel dual-gate MOS-FETs
V
DD
ΔG tr
(dB)
Fig.19 Automatic gain control characteristics
= 12 V; f = 200 MHz; T
−10
−20
−30
−40
−50
0
0
I DSS =
max
typ
min
measured in circuit of Fig.17.
2
amb
4
= 25 C.
6
V agc (V)
8
MGE808
10
10
handbook, halfpage
V
DD
ΔG tr
(dB)
Fig.20 Automatic gain control characteristics
= 12 V; f = 800 MHz; T
−10
−20
−30
−40
−50
0
0
I DSS =
max
typ
min
measured in circuit of Fig.18.
2
amb
4
= 25 C.
BF998; BF998R
6
Product specification
V agc (V)
8
MGE807
10