BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 2

• Manufacturer Part Number: BF998,215
• Description: MOSFET NCH DUAL GATE 12V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF998,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1973-2; 934002640215; BF998 T/R

NXP Semiconductors
FEATURES
 Short channel transistor with high forward transfer
 Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
 VHF and UHF applications with 12 V supply voltage,
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT143B or SOT143R package with
source and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
PINNING
QUICK REFERENCE DATA
1996 Aug 01
V
I
P
y
C
C
F
T
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
SYMBOL
D
admittance to input capacitance ratio
such as television tuners and professional
communications equipment.
j
DS
tot
Silicon N-channel dual-gate MOS-FETs
ig1-s
rs
fs

PIN
1
2
3
4
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
operating junction temperature
SYMBOL
s, b
g
g
d
2
1
CAUTION
source
drain
gate 2
gate 1
PARAMETER
DESCRIPTION
f = 1 MHz
f = 800 MHz
2
handbook, halfpage
CONDITIONS
handbook, halfpage
Marking code: MOp.
Marking code: MOp.
Top view
Top view
Fig.2
Fig.1
4
3
2
1
Simplified outline (SOT143R)
and symbol; BF998R.
Simplified outline (SOT143B)
and symbol; BF998.
1
3
2
4



24
2.1
25
1

TYP.
BF998; BF998R
MAM039
MAM040
Product specification
12
30
200




150
g
g 1
MAX.
g 2
g 1
2
V
mA
mW
mS
pF
fF
dB
C
UNIT
s,b
d
s,b
d