BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 5

• Manufacturer Part Number: BF998,215
• Description: MOSFET NCH DUAL GATE 12V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF998,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1973-2; 934002640215; BF998 T/R

NXP Semiconductors
1996 Aug 01
handbook, halfpage
handbook, halfpage
Silicon N-channel dual-gate MOS-FETs
(mA)
V
V
I D
G2-S
DS
(mA)
I D
Fig.7
= 8 V; V
24
20
16
12
Fig.5 Output characteristics; typical values.
= 4 V; T
8
4
0
24
20
16
12
−1600
0
8
4
0
G2-S
amb
Drain current as a function of gate 1
voltage; typical values.
= 4 V; T
−1200
= 25 C.
2
amb
4
−800
= 25 C.
6
−400
V DS (V)
V G1 (mV)
max
8
0
MGE813
MGE814
V G1-S =
min
typ
10
400
0.4 V
0.3 V
0.2 V
0.1 V
0 V
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
5
handbook, halfpage
handbook, halfpage
Fig.8
V
V
DS
DS
(mA)
(mS)
|y fs |
I D
Fig.6 Transfer characteristics; typical values.
= 8 V; T
= 8 V; T
24
20
16
12
30
24
18
12
8
4
0
6
0
−1
Forward transfer admittance as a function of
drain current; typical values.
0
amb
amb
= 25 C.
= 25 C.
V G2-S = 0 V
4
8
V G2-S = 4 V
0
BF998; BF998R
12
Product specification
V G1 (V)
3 V
I D (mA)
16
2 V
0.5 V
MGE815
MGE811
0 V
1 V
20
1
4 V
3 V
2 V
1 V