BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 7

• Manufacturer Part Number: BF998,215
• Description: MOSFET NCH DUAL GATE 12V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF998,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1973-2; 934002640215; BF998 T/R

NXP Semiconductors
1996 Aug 01
Silicon N-channel dual-gate MOS-FETs
Fig.15 Forward transfer admittance and phase as a
V
(mS)
V
y fs
DS
DS
10
10
(mS)
Fig.13 Input admittance as a function of the
y is
1
= 8 V; V
= 8 V; V
10
10
2
10
10
1
1
2
10
function of frequency; typical values.
G2-S
G2-S
frequency; typical values.
= 4 V; I
= 4 V; I
D
D
= 10 mA; T
= 10 mA; T
10
2
10
y fs
ϕ
amb
amb
2
fs
b is
g is
= 25 C.
= 25 C.
f (MHz)
f (MHz)
MGC468
MGC466
10
3
10
10
10
1
(deg)
ϕ
3
2
fs
7
Fig.14 Reverse transfer admittance and phase as a
V
V
(μS)
y rs
DS
DS
10
10
Fig.16 Output admittance as a function of the
10
(mS)
1
= 8 V; V
y os
= 8 V; V
10
10
3
2
10
10
1
1
2
10
function of frequency; typical values.
G2-S
G2-S
frequency; typical values.
= 4 V; I
= 4 V; I
D
D
= 10 mA; T
= 10 mA; T
10
2
ϕ
y rs
10
BF998; BF998R
rs
amb
amb
2
= 25 C.
= 25 C.
f (MHz)
Product specification
f (MHz)
b os
g os
MGC467
MGC469
10
3
10
10
10
10
1
(deg)
ϕ
3
3
2
rs