BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 12

MOSFET NCH DUAL GATE 12V SOT143B

BF998,215

Manufacturer Part Number
BF998,215
Description
MOSFET NCH DUAL GATE 12V SOT143B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF998,215

Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Voltage - Rated
12V
Current Rating
30mA
Noise Figure
0.6dB
Current - Test
10mA
Voltage - Test
8V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1973-2
934002640215
BF998 T/R
NXP Semiconductors
1996 Aug 01
Plastic surface-mounted package; reverse pinning; 4 leads
Silicon N-channel dual-gate MOS-FETs
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143R
1.1
0.9
A
max
A 1
0.1
3
2
y
0.48
0.38
b p
IEC
0.88
0.78
b 1
e 1
D
e
0.15
0.09
c
JEDEC
3.0
2.8
D
b 1
REFERENCES
b p
0
1.4
1.2
E
4
1
1.9
w
SC-61AA
e
B
JEITA
scale
M
12
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
A
0.55
0.25
L p
A 1
0.45
0.25
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
BF998; BF998R
w
L p
Q
0.1
Product specification
y
A
ISSUE DATE
04-11-16
06-03-16
c
SOT143R
X

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