BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 9

• Manufacturer Part Number: BF998,215
• Description: MOSFET NCH DUAL GATE 12V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF998,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1973-2; 934002640215; BF998 T/R

NXP Semiconductors
1996 Aug 01
handbook, full pagewidth
Silicon N-channel dual-gate MOS-FETs
V
L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm.
L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane.
L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane.
DD
= 12 V; G
S
50 Ω
input
= 3.3 mS; G
100 kΩ
1 nF
L
= 1 mS.
V DD
L1
140 kΩ
1 nF
C1
2 to 18 pF
L2
Fig.18 Gain control test circuit at f = 800 MHz.
1 nF
1 nF
C2
0.5 to 3.5 pF
V agc
270 kΩ
1.8 kΩ
V DD
9
360 Ω
1 nF
C3
0.5 to
3.5 pF
L3
V DD
L4
C4
4 to 40 pF
1 nF
1 nF
BF998; BF998R
Product specification
MGE801
50 Ω
output