BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 3

• Manufacturer Part Number: BF998,215
• Description: MOSFET NCH DUAL GATE 12V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF998,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1973-2; 934002640215; BF998 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a ceramic substrate, 8 mm  10 mm  0.7 mm.
2. Device mounted on a printed-circuit board.
1996 Aug 01
V
I
I
I
P
P
T
T
D
SYMBOL
stg
j
DS
tot
tot
Silicon N-channel dual-gate MOS-FETs
G1
G2
handbook, halfpage
(1) Ceramic substrate.
(2) Printed-circuit board.
P tot max
(mW)
200
100
Fig.3 Power derating curves; BF998.
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation; BF998
total power dissipation; BF998R up to T
storage temperature
operating junction temperature
(2)
PARAMETER
(1)
100
T amb ( C)
o
MLA198
up to T
up to T
200
amb
amb
amb
3
= 60 C; see Fig.3; note 1 
= 50 C; see Fig.3; note 2 
= 50 C; see Fig.4; note 1 
CONDITIONS
handbook, halfpage
P tot max
(mW)
200
100
Fig.4 Power derating curve; BF998R.
0
0




65

MIN.
100
BF998; BF998R
Product specification
12
30
10
10
200
200
200
+150
150
T amb (°C)
MAX.
MGA002
V
mA
mA
mA
mW
mW
mW
C
C
200
UNIT