BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 8

• Manufacturer Part Number: BF998,215
• Description: MOSFET NCH DUAL GATE 12V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF998,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1973-2; 934002640215; BF998 T/R

NXP Semiconductors
1996 Aug 01
handbook, full pagewidth
Silicon N-channel dual-gate MOS-FETs
V
L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm.
L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm.
Tapped at approximately half a turn from the cold side, to adjust G
DD
= 12 V; G
S
= 2 mS; G
50 Ω
input
V DD
L
= 0.5 mS.
5.5 pF
140 kΩ
C1
L1
1 nF
100 kΩ
Fig.17 Gain control test circuit at f = 200 MHz.
1 nF
1 nF
V agc
47 kΩ
15 pF
D1
BB405
L
= 0.5 mS. C1 adjusted for G
input
V tun
330 kΩ
8
1 nF
1.8 kΩ
360 Ω
1 nF
S
1 nF
1 nF
= 2 mS.
L2
V DD
20 μH
10 pF
47 μF
D2
BB405
1 nF
output
V tun
BF998; BF998R
330 kΩ
1 nF
50 Ω
output
MGE802
Product specification