BLF245B,112 NXP Semiconductors, BLF245B,112 Datasheet - Page 10

• Manufacturer Part Number: BLF245B,112
• Description: TRANSISTOR RF DMOS SOT279A
• Manufacturer: NXP Semiconductors

Specifications of BLF245B,112

• Package / Case: SOT-279A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 75000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 18@28VdB
• Frequency (max): 175MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 0.85S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 2
• Power Dissipation (max): 75000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2388; 934003520112; BLF245B; BLF245B

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Philips Semiconductors
2003 Aug 04
handbook, full pagewidth
VHF push-pull power MOS transistor
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a
direct contact between the upper and lower sheets.
copper
copper
strap
strap
L1 + L2
rivet
L3
C1
C2
Fig.12 Component layout for 175 MHz test circuit.
C3
C4
L4
L5
C5
C6
rivet
rivet
L6
L7
copper
copper
strap
strap
C27
R2
C10
V G
R1
C7
C8
C9
V G
200 mm
L8
L9
10
copper
copper
C15
C16
strap
strap
L12
L13
C14
C17
L17
L10
L16
L11
L14
C21
C22
L15
V D
R7
R8
V D
C19
C11
C13
C18
L18
L19
C12
C20
rivet
rivet
C23
C24
C26
C25
L21 + L22
rivet
L20
copper
copper
strap
strap
MBA377
MBA378
Product specification
110 mm
BLF245B