BLF245B,112 NXP Semiconductors, BLF245B,112 Datasheet - Page 2

• Manufacturer Part Number: BLF245B,112
• Description: TRANSISTOR RF DMOS SOT279A
• Manufacturer: NXP Semiconductors

Specifications of BLF245B,112

• Package / Case: SOT-279A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 75000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 18@28VdB
• Frequency (max): 175MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 0.85S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 2
• Power Dissipation (max): 75000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2388; 934003520112; BLF245B; BLF245B

Philips Semiconductors
FEATURES
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT279A balanced flange
package, with a ceramic cap. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT279A
QUICK REFERENCE DATA
RF performance at T
2003 Aug 04
CW, class-B
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability.
VHF push-pull power MOS transistor
PIN
1
2
3
4
5
MODE OF OPERATION
drain 1
gate 1
gate 2
drain 2
source
DESCRIPTION
h
= 25 C in a push-pull common source test circuit.
andbook, halfpage
PIN CONFIGURATION
(MHz)
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
175
f
Top view
V
2
(V)
28
DS
Fig.1 Simplified outline and symbol.
1
2
3
4
5
WARNING
CAUTION
(W)
P
30
MSB018
L
g 2
g 1
(dB)
G
14
p
Product specification
MBB157
BLF245B
d 2
d 1
s
(%)
55
D