BLF245B,112 NXP Semiconductors, BLF245B,112 Datasheet - Page 9

• Manufacturer Part Number: BLF245B,112
• Description: TRANSISTOR RF DMOS SOT279A
• Manufacturer: NXP Semiconductors

Specifications of BLF245B,112

• Package / Case: SOT-279A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 75000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 18@28VdB
• Frequency (max): 175MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 0.85S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 2
• Power Dissipation (max): 75000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2388; 934003520112; BLF245B; BLF245B

Philips Semiconductors
List of components (see Fig.11)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy glass dielectric (
2003 Aug 04
C1,C2
C3
C4
C5, C25, C26
C6, C22, C24
C7, C9, C12,
C14, C17, C19
C8, C10
C11, C20
C13, C18
C15, C16
C21, C27
C23
L1, L3, L20, L22 stripline; note 2
L2, L21
L4, L5
L6, L7
L8, L9
L10, L11
L12, L13
L14, L15
L16, L17
L18, L19
R1, R2
R3, R4
R5, R6
R7, R8
COMPONENT
VHF push-pull power MOS transistor
thickness
each side of the board are connected together by means of copper straps and hollow rivets.
1
16
inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
film dielectric trimmer
multilayer ceramic chip capacitor; note 1
film dielectric trimmer
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
semi-rigid cable
stripline; note 2
stripline; note 2
stripline; note 2
grade 3B Ferroxcube RF choke
stripline; note 2
4 turns enamelled 1 mm copper wire
stripline; note 2
stripline; note 2
0.4 W metal film resistor
10 turns potentiometer
0.4 W metal film resistor
0.4 W metal film resistor
DESCRIPTION
9
270 pF
24 pF
4 to 60 pF
91 pF
5 to 60 pF
100 nF
680 pF
10 nF
10 F, 63 V
100 pF
75 pF
36 pF
55
50
49.5
49.5
49.5
49.5
70 nH
49.5
49.5
10
50
205 k
10
VALUE
length 111 mm
width 2.5 mm
length 111 mm
ext. dia. 2.2 mm
length 28 mm
width 3 mm
length 22.5 mm
width 3 mm
length 4.5 mm
width 3 mm
length 21 mm
width 3 mm
length 9 mm
int. dia. 6 mm
leads 2
length 30 mm
width 3 mm
length 26 mm
width 3 mm
DIMENSIONS
5 mm
r
= 4.5),
Product specification
2222 809 08002
2222 809 08003
2222 852 47104
2222 852 47103
4312 020 36642
CATALOGUE NO.
BLF245B