BLF245B,112 NXP Semiconductors, BLF245B,112 Datasheet - Page 11

• Manufacturer Part Number: BLF245B,112
• Description: TRANSISTOR RF DMOS SOT279A
• Manufacturer: NXP Semiconductors

Specifications of BLF245B,112

• Package / Case: SOT-279A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 75000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 18@28VdB
• Frequency (max): 175MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 0.85S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 2
• Power Dissipation (max): 75000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2388; 934003520112; BLF245B; BLF245B

Philips Semiconductors
2003 Aug 04
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-B operation; V
R
Fig.13 Input impedance as a function of frequency
GS
( )
Z i
= 10 ; P
10
10
5
0
5
0
Fig.15 Definition of MOS impedance.
(series components); typical values per
section.
L
= 30 W (total device).
Z i
100
DS
= 28 V; I
x i
r i
DQ
200
= 2
Z L
25 mA;
MBA379
300
f (MHz)
MGP188
400
11
handbook, halfpage
handbook, halfpage
Class-B operation; V
R
Fig.14 Load impedance as a function of frequency
Class-B operation; V
R
Fig.16 Power gain as a function of frequency;
GS
GS
(dB)
( )
Z L
G p
= 10 ; P
= 10 ; P
30
20
10
25
20
15
10
0
5
0
0
0
(series components); typical values per
section.
typical values per section.
L
L
= 30 W (total device).
= 30 W (total device).
100
100
DS
DS
= 28 V; I
= 28 V; I
DQ
DQ
200
200
= 2
= 2
R L
X L
25 mA;
25 mA;
Product specification
300
300
f (MHz)
BLF245B
f (MHz)
MGP189
MGP190
400
400