BLF245B,112 NXP Semiconductors, BLF245B,112 Datasheet - Page 3

• Manufacturer Part Number: BLF245B,112
• Description: TRANSISTOR RF DMOS SOT279A
• Manufacturer: NXP Semiconductors

Specifications of BLF245B,112

• Package / Case: SOT-279A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 75000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 18@28VdB
• Frequency (max): 175MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 0.85S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 2
• Power Dissipation (max): 75000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2388; 934003520112; BLF245B; BLF245B

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Aug 04
Per transistor section unless otherwise specified
V
I
P
T
T
R
R
handbook, halfpage
SYMBOL
D
SYMBOL
V
stg
j
DS
tot
th j-mb
th mb-h
VHF push-pull power MOS transistor
(1) Current in this area may be limited by R
(2) T
Total device; both sections equally loaded.
GS
10
10
(A)
I D
10
mb
1
2
1
1
= 25 C.
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
(1)
thermal resistance from
junction to mounting base
thermal resistance from
mounting base to heatsink
PARAMETER
Fig.2 DC SOAR.
PARAMETER
10
V DS (V)
DSon
T
mb
(2)
.
total device; both sections equally loaded
total device; both sections equally loaded
MRA922
25 C; total device; both sections equally loaded
10
2
CONDITIONS
3
CONDITIONS
handbook, halfpage
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
P tot
(W)
120
80
40
0
0
Fig.3 Power derating curves.
40
(1)
(2)
80
MIN.
65
VALUE
Product specification
2.3
0.3
120
T h (
BLF245B
65
20
4.5
75
+150
200
MAX.
MRA929
o
C)
160
UNIT
K/W
K/W
V
V
A
W
UNIT
C
C