BLF245B,112 NXP Semiconductors, BLF245B,112 Datasheet - Page 5

• Manufacturer Part Number: BLF245B,112
• Description: TRANSISTOR RF DMOS SOT279A
• Manufacturer: NXP Semiconductors

Specifications of BLF245B,112

• Package / Case: SOT-279A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 75000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 18@28VdB
• Frequency (max): 175MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 0.85S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 2
• Power Dissipation (max): 75000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2388; 934003520112; BLF245B; BLF245B

Philips Semiconductors
2003 Aug 04
handbook, halfpage
handbook, halfpage
R DSon
VHF push-pull power MOS transistor
(mV/K)
V
Fig.4
I
Fig.6
( )
D
T.C.
DS
= 0.75 A; V
= 10 V.
2
0
2
4
6
8
2
1
0
0
1
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
GS
= 10 V.
40
10
80
10
2
120
I D (mA)
T j ( C)
MGP182
MGP180
10
160
3
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(pF)
C
(A)
160
120
I D
= 10 V.
= 0; f = 1 MHz.
80
40
6
4
2
0
0
0
0
Drain current as a function of gate-source
voltage; typical values per section.
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
10
4
20
8
T j = 25 C
C os
C is
125 C
Product specification
12
30
V GS (V)
V DS (V)
BLF245B
MGP181
MGP183
16
40