HUF76131SK8 Fairchild Semiconductor, HUF76131SK8 Datasheet - Page 2

• Manufacturer Part Number: HUF76131SK8
• Description: MOSFET Power 10a 30V 0.013 Ohm 1Ch HS Logic Gate
• Manufacturer: Fairchild Semiconductor

Specifications of HUF76131SK8

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Absolute Maximum Ratings
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
©2003 Fairchild Semiconductor Corporation
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
1. T
2. 50
3. 177.3
Continuous (Figure 2) (Notes 2, 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
o
= 25
C/W measured using FR-4 board with 0.76 in
o
C/W measured using FR-4 board with 0.0115 in
o
C to 150
PARAMETER
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
T
A
= 25
T
A
= 25
o
C, Unless Otherwise Specified
o
SYMBOL
C, Unless Otherwise Specified
SYMBOL
V
Q
r
BV
t
Q
DS(ON)
Q
t
V
d(OFF)
C
C
GS(TH)
Q
R
I
I
d(ON)
C
t
g(TOT)
GSS
t
Q
Q
t
DSS
OFF
g(TH)
SD
RR
OSS
RSS
ON
rr
g(5)
ISS
DSS
t
t
gd
2
gs
r
f
JA
footprint at 10 seconds.
2
I
I
I
I
footprint at 1000 seconds.
SD
SD
SD
SD
I
V
V
V
V
I
I
I
V
R
(Figure 15)
V
V
V
V
(Figure 12)
Pad Area = 0.76 in
Pad Area = 0.054 in
Pad Area = 0.0115 in
D
D
D
D
GS
DS
DS
GS
DD
GS
GS
GS
GS
DS
= 250 A, V
= 10A, V
= 10A, V
= 10A, V
= 10A
= 2.3A
= 2.3A, dI
= 2.3A, dI
= 25V, V
= 25V, V
= 15V, I
= 0V to 10V V
= 25V, V
= V
= 20V
= 6.8
= 0V to 5V
= 0V to 1V
DS
, I
GS
GS
GS
TEST CONDITIONS
SD
SD
TEST CONDITIONS
D
D
GS
GS
GS
GS
= 4.5V (Figures 9,14)
= 5V
= 10V
= 250 A (Figure 10)
/dt = 100A/ s
/dt = 100A/ s
= 0V
= 0V, T
10A, R
= 0V, f = 1MHz
= 0V (Figure 11)
R
(Figure 13)
2
DD
2
L
(Note 2)
2
(See TB377)
= 1.5
(See TB377)
= 15V, I
L
A
J
= 1.5 , V
= 150
, T
DGR
DSS
STG
DM
pkg
I
GS
AS
g(REF)
D
D
D
o
L
C
GS
10A,
= 1.0mA
5V,
HUF76131SK8
-55 to 150
MIN
Figure 5
MIN
Figure 6
-
-
-
-
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.02
300
260
2.5
30
30
10
20
TYP
0.017
0.015
0.011
1605
TYP
1.53
4.00
9.50
685
115
15
61
33
36
39
22
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HUF76131SK8 Rev. B1
MAX
0.018
0.017
0.013
143.4
177.3
1.25
MAX
1.85
1.1
250
115
105
57
81
100
47
26
50
1
-
-
-
-
-
-
-
-
-
-
-
UNITS
W/
UNITS
UNITS
o
o
o
W
o
o
o
V
V
V
A
C
C
C
o
C/W
C/W
C/W
nC
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
V
V
C
A
A