HUF76131SK8 Fairchild Semiconductor, HUF76131SK8 Datasheet - Page 3

• Manufacturer Part Number: HUF76131SK8
• Description: MOSFET Power 10a 30V 0.013 Ohm 1Ch HS Logic Gate
• Manufacturer: Fairchild Semiconductor

Specifications of HUF76131SK8

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
500
100
1.2
1.0
0.8
0.6
0.4
0.2
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
10
1
0
1
0
0.001
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.1
10
1
10
TEMPERATURE
-5
25
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
V
DS
T
A
, DRAIN TO SOURCE VOLTAGE (V)
, AMBIENT TEMPERATURE (
DS(ON)
50
10
-4
V
DSS(MAX)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
75
SINGLE PULSE
= 30V
100
10
-3
T
T
A
J
o
C)
= MAX RATED
= 25
10ms
100 s
1ms
125
o
C
t, RECTANGULAR PULSE DURATION (s)
10
-2
150
100
10
-1
1000
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
100
12
10
10
8
6
4
2
0
1
10
25
-5
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
FIGURE 5. PEAK CURRENT CAPABILITY
V
10
25
GS
AMBIENT TEMPERATURE
0
10
= 5V
-4
50
o
C DERATE PEAK
T
150 - T
A
, AMBIENT TEMPERATURE (
NOTES:
DUTY FACTOR: D = t
PEAK T
125
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
t, PULSE WIDTH (s)
-3
A
10
75
J
1
= P
10
DM
-2
T
x Z
P
A
DM
100
= 25
JA
1
/t
10
10
o
2
x R
C
2
-1
t
1
JA
t
HUF76131SK8 Rev. B1
o
2
C)
+ T
125
10
A
0
10
3
10
150
1